IndiumV3, Main, Repository, bibRecord, 004009

High-quality metamorphic compositionally graded InGaAs buffers

Identifieur interne : 004009 ( Main/Repository ); précédent : 004008; suivant : 004010

High-quality metamorphic compositionally graded InGaAs buffers

Auteurs : RBID : Pascal:10-0121851

Descripteurs français

Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Méthode MOCVD, Analyse quantitative, Dislocation filetée, Densité dislocation, Mécanisme croissance, Photoluminescence, Dopage, Confinement quantique, Puits quantique, Nanomatériau, Hétérostructure, Relaxation contrainte, Arséniure d'indium, Arséniure de gallium, Réaction dirigée, Dispositif optoélectronique, InGaAs, InxGa1-xAs, GaAs, 8115G, 6172L, 8110A, 7855.
Wicri :
- concept : Analyse quantitative, Dopage.

English descriptors

KwdEn :
- Dislocation density, Doping, Gallium arsenides, Growth mechanism, Heterostructures, III-V compound, III-V semiconductors, Indium arsenides, MOCVD, Nanostructured materials, Optoelectronic devices, Photoluminescence, Quantitative chemical analysis, Quantum confinement, Quantum wells, Stress relaxation, Template reaction, Threading dislocation.

Abstract

We have investigated the use of a continuous, linear grading scheme for compositionally graded (metamorphic) In_xGa_1-xAs buffers on GaAs grown using MOCVD, which can be used as virtual substrates for optical emitters operating at wavelengths > 1.2 μm. Graded buffer quality, as quantified by threading dislocation density (TDD) measurements, was investigated for a range of different graded buffer designs and growth parameters. The best graded buffers obtained had TDD < 9.5 × 10⁴ cm^-2, at a final composition of x=0.346. MOCVD reactor configuration was found to play a key role in obtaining the best graded buffers. Photoluminescence (PL) measurements were carried out on doped and undoped quantum-well separate confinement heterostructures (QW-SCH) that were re-grown on these buffers. The results showed that these buffers can serve as high-quality strain-relaxed templates for optoelectronic devices operating in the 1.2-1.5 μm wavelength region, and it is expected that with further refinement, high-quality virtual substrates can be made that will allow operation even beyond 1.6 μm.

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Le document en format XML

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<author><name sortKey="Lee, Kenneth E" uniqKey="Lee K">Kenneth E. Lee</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><settlement type="city">Cambridge (Massachusetts)</settlement>
<region type="state">Massachusetts</region>
</placeName>
<orgName type="university">Massachusetts Institute of Technology</orgName>
</affiliation>
</author>
<author><name sortKey="Fitzgerald, Eugene A" uniqKey="Fitzgerald E">Eugene A. Fitzgerald</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
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<country>États-Unis</country>
<placeName><settlement type="city">Cambridge (Massachusetts)</settlement>
<region type="state">Massachusetts</region>
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<orgName type="university">Massachusetts Institute of Technology</orgName>
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<publicationStmt><idno type="inist">10-0121851</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0121851 INIST</idno>
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<idno type="wicri:Area/Main/Corpus">004912</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dislocation density</term>
<term>Doping</term>
<term>Gallium arsenides</term>
<term>Growth mechanism</term>
<term>Heterostructures</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>MOCVD</term>
<term>Nanostructured materials</term>
<term>Optoelectronic devices</term>
<term>Photoluminescence</term>
<term>Quantitative chemical analysis</term>
<term>Quantum confinement</term>
<term>Quantum wells</term>
<term>Stress relaxation</term>
<term>Template reaction</term>
<term>Threading dislocation</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Méthode MOCVD</term>
<term>Analyse quantitative</term>
<term>Dislocation filetée</term>
<term>Densité dislocation</term>
<term>Mécanisme croissance</term>
<term>Photoluminescence</term>
<term>Dopage</term>
<term>Confinement quantique</term>
<term>Puits quantique</term>
<term>Nanomatériau</term>
<term>Hétérostructure</term>
<term>Relaxation contrainte</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Réaction dirigée</term>
<term>Dispositif optoélectronique</term>
<term>InGaAs</term>
<term>InxGa1-xAs</term>
<term>GaAs</term>
<term>8115G</term>
<term>6172L</term>
<term>8110A</term>
<term>7855</term>
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<front><div type="abstract" xml:lang="en">We have investigated the use of a continuous, linear grading scheme for compositionally graded (metamorphic) In<sub>x</sub>
Ga<sub>1-x</sub>
As buffers on GaAs grown using MOCVD, which can be used as virtual substrates for optical emitters operating at wavelengths > 1.2 μm. Graded buffer quality, as quantified by threading dislocation density (TDD) measurements, was investigated for a range of different graded buffer designs and growth parameters. The best graded buffers obtained had TDD < 9.5 × 10<sup>4</sup>
 cm<sup>-2</sup>
, at a final composition of x=0.346. MOCVD reactor configuration was found to play a key role in obtaining the best graded buffers. Photoluminescence (PL) measurements were carried out on doped and undoped quantum-well separate confinement heterostructures (QW-SCH) that were re-grown on these buffers. The results showed that these buffers can serve as high-quality strain-relaxed templates for optoelectronic devices operating in the 1.2-1.5 μm wavelength region, and it is expected that with further refinement, high-quality virtual substrates can be made that will allow operation even beyond 1.6 μm.</div>
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<fA11 i1="01" i2="1"><s1>LEE (Kenneth E.)</s1>
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<fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology</s1>
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<fC01 i1="01" l="ENG"><s0>We have investigated the use of a continuous, linear grading scheme for compositionally graded (metamorphic) In<sub>x</sub>
Ga<sub>1-x</sub>
As buffers on GaAs grown using MOCVD, which can be used as virtual substrates for optical emitters operating at wavelengths > 1.2 μm. Graded buffer quality, as quantified by threading dislocation density (TDD) measurements, was investigated for a range of different graded buffer designs and growth parameters. The best graded buffers obtained had TDD < 9.5 × 10<sup>4</sup>
 cm<sup>-2</sup>
, at a final composition of x=0.346. MOCVD reactor configuration was found to play a key role in obtaining the best graded buffers. Photoluminescence (PL) measurements were carried out on doped and undoped quantum-well separate confinement heterostructures (QW-SCH) that were re-grown on these buffers. The results showed that these buffers can serve as high-quality strain-relaxed templates for optoelectronic devices operating in the 1.2-1.5 μm wavelength region, and it is expected that with further refinement, high-quality virtual substrates can be made that will allow operation even beyond 1.6 μm.</s0>
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<s5>09</s5>
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<s5>09</s5>
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High-quality metamorphic compositionally graded InGaAs buffers

High-quality metamorphic compositionally graded InGaAs buffers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri